| PART |
Description |
Maker |
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| SIZ790DT-T1-GE3 |
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
16 A, 30 V, 0.0093 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 20HS3LL- STS20NHS3LL |
N-CHANNEL 30 V - 0.0032 Ω - 20 A SO-8 STripFET?III MOSFET PLUS MONOLITHIC SCHOTTKY
N-CHANNEL 30 V - 0.0032 ヘ - 20 A SO-8 STripFET⑩III MOSFET PLUS MONOLITHIC SCHOTTKY
N-CHANNEL 30 V - 0.0032 惟 - 20 A SO-8 STripFET?⑸II MOSFET PLUS MONOLITHIC SCHOTTKY
|
ETC
List of Unclassifed Manufacturers
|
| STS3DPFS30 |
P - CHANNEL 30V - 0.065W - 3A - S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
|
ON Semiconductor
|
| VQ1001J VQ1001P |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode N沟道30 V的（副）MOSFET的肖特基二极
Quad N-Channel 30-V (D-S) MOSFETs
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| FDFS2P753AZ |
Integrated P-Channel PowerTrenchMOSFET and Schottky Diode -30V, -3A, 115m 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| STK30NHS3LL |
N-channel 30 V - 0.0028 Ω - 30 A - PolarPAK? STripFET Power MOSFET plus monolithic Schottky
N-channel 30 V - 0.0028 ヘ - 30 A - PolarPAK㈢ STripFET⑩ Power MOSFET plus monolithic Schottky
|
STMicroelectronics
|
| NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(双P通道，增强模式，SO-8封装的功率MOSFET与肖特基二极
|
ON Semiconductor
|
| DMS3014SSS-13 DMS3014SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
10.4 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
